Anxinmei focuses on technological innovation and intellectual property protection, and now has 95 national patents, including 91 invention patents, 3 utility models and 1 design, covering substrate, epitaxy, chip, packaging, application and other fields.
| Patent number | Patent name | Types of patents |
| 202030081138.5 | Portable sterilized tableware box | Appearance design |
| 201922085174.3 | Sterilization and deodorizer | Utility model |
| 201911105889.9 | A LED package structure | Invent |
| 201910535189.7 | A semiconductor structure | Invent |
| 201910535164.7 | Light emitting diode chip and manufacturing method thereof | Invent |
| 201910400487.5 | Manufacturing method of isolation slot and its application | Invent |
| 201811510747.6 | Light emitting diode chip and preparation method thereof | Invent |
| 201811510723.0 | Preparation method of Epitaxial structure of Light-emitting Diode | Invent |
| 201811424969.6 | A method for manufacturing epitaxial structure of light emitting diodes and its application | Invent |
| 201811416176.X | Semiconductor element cutting method and manufacturing method | Invent |
| 201811415026.7 | Method for cleaning reaction chamber of metal-organic chemical vapor deposition equipment | Invent |
| 201811397338.X | A growth method of aluminum nitride epitaxial layer | Invent |
| 201811180931.9 | A growth method of LED Epitaxial structure | Invent |
| 201810312186.2 | A method for preparing High Voltage LED Chip with High Light emitting Surface ratio | Invent |
| 201710828420.2 | A method for measuring the Optical Power of LED Chip | Invent |
| 201710756746.9 | A method to improve the luminous efficiency of High Voltage LED Chip | Invent |
| 201710705340.8 | Optimization of Epitaxial structure and growth method of Ultraviolet LED luminescent layer | Invent |
| 201710704823.6 | Epitaxial structure and growth method of Violet LED | Invent |
| 201710704820.2 | Epitaxial structure and growth method for improving the luminous efficiency of Violet LED | Invent |
| 201710704794.3 | Ultraviolet LED Epitaxial structure and its growth method | Invent |
| 201710388108.6 | A Manufacturing method of Deep Ultraviolet LED Chip | Invent |
| 201710380627.8 | LED metal electrode structure and preparation method thereof | Invent |
| 201710354841.6 | A kind of copper polishing liquid supply equipment for LED chip thinning process | Invent |
| 201710137877.9 | An Epitaxial structure and growth process of GaN-based HEMT Devices | Invent |
| 201610890526.0 | A method of testing sorting and color separation | Invent |
| 201610418150.3 | An Epitaxial structure and production process of High brightness Qingguang LED | Invent |
| 201610373575.7 | A growth method of multiple Quantum Wells in Ultraviolet LED active region | Invent |
| 201510297482.6 | A New preparation method of highlight PSS | Invent |
| 201510278486.X | A manufacturing process of reflection electrode | Invent |
| 201510230317.9 | Multi-specification lithography cleaning fixture | Invent |
| 201510230274.4 | Microscope film table | Invent |
| 201510229945.5 | Manufacturing method of high temperature quartz heating trough | Invent |
| 201510229939.X | The method of removing residual Gold from Lithography marking points of LED Chip | Invent |
| 201510222207.8 | A method for substrate recovery and reuse of LED scrap Wafer | Invent |
| 201510056425.9 | An Epitaxial method for improving current expansion of GaN-based LED chips | Invent |
| 201510035749.4 | A GaN-based LED Epitaxial structure suitable for High current density and its growth method | Invent |
| 201410834957.6 | A Multi-function automatic Edge Finder for LED Chip | Invent |
| 201410834914.8 | A kind of evaporation machine for reducing Au consumption of LED electrode | Invent |
| 201410828370.4 | An airborne disc for LED gold stripping | Invent |
| 201410828355.X | LED cleaning basket pad | Invent |
| 201410828343.7 | Plasma cleaning equipment | Invent |
| 201410827750.6 | A Multi-size LED Chip compatible Quartz cleaning basket | Invent |
| 201410091144.2 | A growth method of Composite nucleation layer for improving the quality of Gallium Nitride crystals | Invent |
| 201410091099.0 | A LED Chip Fabrication method for Surface coarsening of GaN-based Epitaxial layer | Invent |
| 201410090745.1 | A growth method of GaN-based LED Multi-order buffer layer based on Sapphire substrate | Invent |
| 201410090733.9 | A growth method of GaN Quantum well structure | Invent |
| 201410090720.1 | A method for epitaxial growth of Mg-doped P-type GaN | Invent |
| 201410090582.7 | An Epitaxial method for improving the brightness of gan-based LED | Invent |
| 201410090564.9 | A new type of filter heating system for dryer | Invent |
| 201410090546.0 | An epitaxial growth method for improving reverse leakage of gallium nitride-based light-emitting diodes | Invent |
| 201410090325.3 | P-type insertion layer with cyclic structure and growth method thereof | Invent |
| 201410090321.5 | An Epitaxial growth method to improve the Electrostatic tolerance of GaN-based LED | Invent |
| 201410003103.3 | A method for manufacturing LED chips | Invent |
| 201410002107.X | An epitaxial growth method to avoid large-size epitaxial lobes | Invent |
| 201410001948.9 | An Epitaxial growth method of High brightness Gallium Nitride based Light emitting Diodes | Invent |
| 201410001887.6 | A growth method of channel layer technique for improving the luminous efficiency of gallium nitride-based light-emitting diodes | Invent |
| 201410001858.X | A growth method of Light-emitting Diodes with novel P-type Electron Barrier structure | Invent |
| 201410001845.2 | An Epitaxial growth method to improve the luminous efficiency of LED | Invent |
| 201320138490.2 | A New Type of Direct LED backlight | Utility model |
| 201310311113.9 | A LED chip cleaning basket | Invent |
| 201310224408.2 | Epitaxial structure and growth method for improving wavelength concentration in GaN-based Epitaxial Wafers | Invent |
| 201310180372.2 | A growth method of epitaxial structure of GaN-based light-emitting diodes | Invent |
| 201310099202.1 | LED epitaxial wafer with trapezoidal structure N-type insertion layer and growth method thereof | Invent |
| 201310008579.1 | A method for growing multiple quantum well layers to improve LED brightness | Invent |
| 201210513522.2 | High-power LED lamp and packaging method thereof | Invent |
| 201210457337.6 | LED chip and preparation method thereof | Invent |
| 201210424140.2 | Epitaxial structure capable of improving luminescent efficiency and preparation method thereof | Invent |
| 201210367661.9 | Method for cutting luminescent original | Invent |
| 201210367628.6 | Method for cutting luminescent elements with different cutting hole depths | Invent |
| 201210341597.7 | Method for cutting semiconductor elements containing dielectric layers | Invent |
| 201210341574.6 | Quadrennial LED chip with Bragg reflection structure | Invent |
| 201210281517.3 | Wax removal method for semiconductor wafer thinning process | Invent |
| 201210249443.5 | Method for cutting semiconductor elements containing metal back plating | Invent |
| 201210243438.3 | LED chip with stepped current blocking structure and manufacturing method thereof | Invent |
| 201120568437.7 | Support structure for LED packaging | utility model |
| 200910051657.X | Multiple quantum well structure for optoelectronic devices and manufacturing method thereof | Invent |
| 200910021736.6 | Conductive silver glue for encapsulating LEDs and preparation method thereof | Invent |
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