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Anxinmei focuses on technological innovation and intellectual property protection, and now has 95 national patents, including 91 invention patents, 3 utility models and 1 design, covering substrate, epitaxy, chip, packaging, application and other fields.


Patent number Patent name Types of patents
202030081138.5 Portable sterilized tableware box Appearance design
201922085174.3 Sterilization and deodorizer Utility model
201911105889.9 A LED package structure Invent
201910535189.7 A semiconductor structure Invent
201910535164.7 Light emitting diode chip and manufacturing method thereof Invent
201910400487.5 Manufacturing method of isolation slot and its application Invent
201811510747.6 Light emitting diode chip and preparation method thereof Invent
201811510723.0 Preparation method of Epitaxial structure of Light-emitting Diode Invent
201811424969.6 A method for manufacturing epitaxial structure of light emitting diodes and its application Invent
201811416176.X Semiconductor element cutting method and manufacturing method Invent
201811415026.7 Method for cleaning reaction chamber of metal-organic chemical vapor deposition equipment Invent
201811397338.X A growth method of aluminum nitride epitaxial layer Invent
201811180931.9 A growth method of LED Epitaxial structure Invent
201810312186.2 A method for preparing High Voltage LED Chip with High Light emitting Surface ratio Invent
201710828420.2 A method for measuring the Optical Power of LED Chip Invent
201710756746.9 A method to improve the luminous efficiency of High Voltage LED Chip Invent
201710705340.8 Optimization of Epitaxial structure and growth method of Ultraviolet LED luminescent layer Invent
201710704823.6 Epitaxial structure and growth method of Violet LED Invent
201710704820.2 Epitaxial structure and growth method for improving the luminous efficiency of Violet LED Invent
201710704794.3 Ultraviolet LED Epitaxial structure and its growth method Invent
201710388108.6 A Manufacturing method of Deep Ultraviolet LED Chip Invent
201710380627.8 LED metal electrode structure and preparation method thereof Invent
201710354841.6 A kind of copper polishing liquid supply equipment for LED chip thinning process Invent
201710137877.9 An Epitaxial structure and growth process of GaN-based HEMT Devices Invent
201610890526.0 A method of testing sorting and color separation Invent
201610418150.3 An Epitaxial structure and production process of High brightness Qingguang LED Invent
201610373575.7 A growth method of multiple Quantum Wells in Ultraviolet LED active region Invent
201510297482.6 A New preparation method of highlight PSS Invent
201510278486.X A manufacturing process of reflection electrode Invent
201510230317.9 Multi-specification lithography cleaning fixture Invent
201510230274.4 Microscope film table Invent
201510229945.5 Manufacturing method of high temperature quartz heating trough Invent
201510229939.X The method of removing residual Gold from Lithography marking points of LED Chip Invent
201510222207.8 A method for substrate recovery and reuse of LED scrap Wafer Invent
201510056425.9 An Epitaxial method for improving current expansion of GaN-based LED chips Invent
201510035749.4 A GaN-based LED Epitaxial structure suitable for High current density and its growth method Invent
201410834957.6 A Multi-function automatic Edge Finder for LED Chip Invent
201410834914.8 A kind of evaporation machine for reducing Au consumption of LED electrode Invent
201410828370.4 An airborne disc for LED gold stripping Invent
201410828355.X LED cleaning basket pad Invent
201410828343.7 Plasma cleaning equipment Invent
201410827750.6 A Multi-size LED Chip compatible Quartz cleaning basket Invent
201410091144.2 A growth method of Composite nucleation layer for improving the quality of Gallium Nitride crystals Invent
201410091099.0 A LED Chip Fabrication method for Surface coarsening of GaN-based Epitaxial layer Invent
201410090745.1 A growth method of GaN-based LED Multi-order buffer layer based on Sapphire substrate Invent
201410090733.9 A growth method of GaN Quantum well structure Invent
201410090720.1 A method for epitaxial growth of Mg-doped P-type GaN Invent
201410090582.7 An Epitaxial method for improving the brightness of gan-based LED Invent
201410090564.9 A new type of filter heating system for dryer Invent
201410090546.0 An epitaxial growth method for improving reverse leakage of gallium nitride-based light-emitting diodes Invent
201410090325.3 P-type insertion layer with cyclic structure and growth method thereof Invent
201410090321.5 An Epitaxial growth method to improve the Electrostatic tolerance of GaN-based LED Invent
201410003103.3 A method for manufacturing LED chips Invent
201410002107.X An epitaxial growth method to avoid large-size epitaxial lobes Invent
201410001948.9 An Epitaxial growth method of High brightness Gallium Nitride based Light emitting Diodes Invent
201410001887.6 A growth method of channel layer technique for improving the luminous efficiency of gallium nitride-based light-emitting diodes Invent
201410001858.X A growth method of Light-emitting Diodes with novel P-type Electron Barrier structure Invent
201410001845.2 An Epitaxial growth method to improve the luminous efficiency of LED Invent
201320138490.2 A New Type of Direct LED backlight Utility model
201310311113.9 A LED chip cleaning basket Invent
201310224408.2 Epitaxial structure and growth method for improving wavelength concentration in GaN-based Epitaxial Wafers Invent
201310180372.2 A growth method of epitaxial structure of GaN-based light-emitting diodes Invent
201310099202.1 LED epitaxial wafer with trapezoidal structure N-type insertion layer and growth method thereof Invent
201310008579.1 A method for growing multiple quantum well layers to improve LED brightness Invent
201210513522.2 High-power LED lamp and packaging method thereof Invent
201210457337.6 LED chip and preparation method thereof Invent
201210424140.2 Epitaxial structure capable of improving luminescent efficiency and preparation method thereof Invent
201210367661.9 Method for cutting luminescent original Invent
201210367628.6 Method for cutting luminescent elements with different cutting hole depths Invent
201210341597.7 Method for cutting semiconductor elements containing dielectric layers Invent
201210341574.6 Quadrennial LED chip with Bragg reflection structure Invent
201210281517.3 Wax removal method for semiconductor wafer thinning process Invent
201210249443.5 Method for cutting semiconductor elements containing metal back plating Invent
201210243438.3 LED chip with stepped current blocking structure and manufacturing method thereof Invent
201120568437.7 Support structure for LED packaging utility model
200910051657.X Multiple quantum well structure for optoelectronic devices and manufacturing method thereof Invent
200910021736.6 Conductive silver glue for encapsulating LEDs and preparation method thereof Invent